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2SD2391 NPN Transistors(BJT) 60V 2A 210MHz 120~270 130mV/0.13V SOT-89/SC-62/MPT3 marking DTQ
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
集电极连续输出电流IC Collector Current(IC) | 2A |
截止频率fT Transtion Frequency(fT) | 210MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 130mV/0.13V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | Medium Power Transistor (-60V, -2A) Low saturation voltage,Vce=0.13v collector-emitter voltage =60v |
描述与应用 | 中等功率晶体管(-60V,-2A) 低饱和电压,VCE=0.13V 集电极 - 发射极电压=60V |