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2SD2391 NPN Transistors(BJT) 60V 2A 210MHz 120~270 130mV/0.13V SOT-89/SC-62/MPT3 marking DTQ

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
210MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
130mV/0.13V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsMedium Power Transistor (-60V, -2A) Low saturation voltage,Vce=0.13v collector-emitter voltage =60v
描述与应用中等功率晶体管(-60V,-2A) 低饱和电压,VCE=0.13V 集电极 - 发射极电压=60V
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