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2SD2704K NPN Transistors(BJT) 50V 300mA/0.3A 35MHz 820~2700 50mV SOT-23/SC-59/SMT3 marking XL
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
截止频率fT Transtion Frequency(fT) | 35MHz |
直流电流增益hFE DC Current Gain(hFE) | 820~2700 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 50mV |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | For Muting (20V,0.3A) High DC current gain: hFE = 820 to 2700; High emitter-base voltage.Vebo=25V(min); low R on,R on=0.7Ω |
描述与应用 | 静音(20V,0.3A) 高直流电流增益:HFE= 820〜2700; 高发射基地voltage.Vebo= 25V(min); 低R,R=0.7Ω |