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2SD999 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 1A ft=130MHz HFE= 90~180 Vce=210mV/0.21V SOT-89 marking CM

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
210mV/0.21V
耗散功率Pc
Power Dissipation
2W
Description & Applications NPN Silicon epitaxial transistor power Mini Mold low collector saturation voltage :Vce<0.4v excellent DC current gain linearity :hFE =140 complement to PNP type 2SB798
描述与应用 NPN硅外延晶体管电源小型模具 低集电极饱和电压VCE<0.4V 优良的直流电流增益线性度:HFE= 140 补充PNP型2SB798
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