Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SD999 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 1A ft=130MHz HFE= 90~180 Vce=210mV/0.21V SOT-89 marking CM
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流IC Collector Current(IC) |
1A |
| 截止频率fT Transtion Frequency(fT) |
130MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
210mV/0.21V |
| 耗散功率Pc Power Dissipation |
2W |
| Description & Applications | NPN Silicon epitaxial transistor power Mini Mold low collector saturation voltage ：Vce<0.4v excellent DC current gain linearity ：hFE =140 complement to PNP type 2SB798 |
| 描述与应用 | NPN硅外延晶体管电源小型模具 低集电极饱和电压VCE<0.4V 优良的直流电流增益线性度：HFE= 140 补充PNP型2SB798 |
