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2SJ146 MOSFET P-Channel -50V -100mA/0.1A 150ohm SOT-23 marking 4D high-speed switch

Price (excluding freight):
Batches(PCS):
$0.234
≤99
$0.211
≤499
$0.176
≤999
$0.152
≤2999
$0.140
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-100mA/-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
150Ω @-10mA,-5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.5--3.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsSilicon P-Channel MOS FET For switching Features High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing
描述与应用硅P沟道MOS FET 用于开关 特性 高速开关 迷你型包装,使设备小型化和自动 通过插入磁带/盒包装
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