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2SJ146 MOSFET P-Channel -50V -100mA/0.1A 150ohm SOT-23 marking 4D high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
| 最大漏极电流Id Drain Current | -100mA/-0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 150Ω @-10mA,-5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel MOS FET For switching Features High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅P沟道MOS FET 用于开关 特性 高速开关 迷你型包装，使设备小型化和自动 通过插入磁带/盒包装 |
