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2SJ356 MOSFET P-Channel -60V 2A 0.41ohm SOT-89 marking PR high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.41Ω @-1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | FEATURES • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A |
| 描述与应用 | •可直接驱动5-V IC •低导通电阻 RDS（ON）= 0.60Ω最大。 @ VGS=-4 V，ID= -1.0à RDS（ON）= 0.35Ω最大。 @ VGS=-10V，ID=-1.0 A |
