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2SJ451ZK MOSFET P-Channel -20V 200mA 0.23ohm SOT-23 marking ZK low on-resistance low drive power

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.23Ω @-100mA,-4V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.5--1.5V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & ApplicationsFeatures • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).
描述与应用•低导通电阻。 •低驱动功率 •2.5 V门驱动装置。 •小包装（MPAK），
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