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2SJ536 MOSFET P-Channel -30V -100mA/0.1A 0.05ohm SOT-323C marking 2C high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.05Ω @-10mA,-5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Features High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. low-voltage drive (Vth-1 to 2V) Low Ron |
| 描述与应用 | 高速开关 S-迷你型包装，使瘦身套和通过自动插入磁带/盒包装。 低电压驱动（阈值电压，1〜2V）低朗 |
