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2SJ559 MOSFET P-Channel -30V 100mA/0.1A 0.006ohm SOT-523 marking C1 2.5V drive Low gate cut-off voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.006Ω @-10mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.0--1.7V
耗散功率Pd
Power Dissipation		200mW/0.2W
Description & ApplicationsFEATURES • Can be driven by a 2.5 V power source. • Low gate cut-off voltage.
描述与应用•可以由一个2.5 V电源。 •低栅极截止电压
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