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2SK2334STL MOSFET N-Channel 60V 20A TO-252/D-PAK marking K2334 low on-resistance/fast switch/low-voltage drive/DC-DC converting

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current20A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.04Ω/Ohm @10A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.25V
耗散功率Pd Power Dissipation30W
Description & ApplicationsSilicon N-Channel MOS FET Features High speed power switching Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for switching regulator,DC-DC converter Avalanche ratings
描述与应用硅N沟道MOS FET 特性 高速功率开关 低导通电阻 高速开关 低驱动电流 4V栅极驱动器可以驱动自5V电源 合适的开关稳压器,DC-DC转换 雪崩额定值
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