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2SK2373ZE MOSFET N-Channel 30V 400mA/0.4A SOT-23/SC-59 marking ZE low on-resistance/fast switch/low-voltage drive/DC-DC converting

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current400mA/0.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1Ω/Ohm @10A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsSilicon N-Channel MOS FET Features Silicon N-Channel MOS FET Low frequency power switching Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch
描述与应用硅N沟道MOS FET 特性 硅N沟道MOS FET 低频电源开关 低导通电阻 小型封装 低驱动电流 4 V栅极驱动器可驱动从5 V电源 适合低信号负载开关
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