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2SK2503TL MOSFET N-Channel 60V 5A TO-252/D-PAK marking K2503 low on-resistance/fast switchwide SOA/4V drive
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.11Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | 4V Drive Nch MOS FET Silicon N-channel MOS FET Features Silicon N-channel MOS FET Low On-resistance Fast switching speed Wide SOA (safe operating area) 4V drive Drive circuits can be simple Parallel use is easy |
| 描述与应用 | 4V驱动N沟道MOS FET 硅N沟道MOS FET 特性 硅N沟道MOS FET 低导通电阻 开关速度快 宽SOA（安全工作区） 4V驱动 驱动电路可以很简单 并行使用容易 |
