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2SK2552B JFET N-Channel 20v 0.15~0.24mA SOT-523 marking CF radio and telephone

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.15~0.3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1~-1v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•JUNCTION FIELD EFFECT TRANSISTOR •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA)
描述与应用•结型场效应晶体管 •N沟道硅结型场效应晶体管 •高正向转移导纳 1000μs典型值。 (IDSS= 100μA) 1600μs典型值。 (IDSS= 200μA)
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