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2SK2569ZN MOSFET N-Channel 50V 400mA/0.4A SOT-23/SC-59 marking ZN low on-resistance/2.5V gate driver/small package
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 400mA/0.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.0Ω/Ohm @100mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N-Channel MOS FET Low frequency power switching Features Silicon N-Channel MOS FET Low on-resistance 2.5V gate drive device Small package (MPAK) |
| 描述与应用 | 硅N沟道MOS FET 低频电源开关 特性 硅N沟道MOS FET 低导通电阻 2.5V栅极驱动器 小型封装（MPAK） |
