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2SK2788VYTR MOSFET N-Channel 60V 2A SOT-89 marking VY Low drive current/fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.12Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS(on)= 0.12 Ω typ (VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices |
| 描述与应用 | 硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS（ON）=0.12Ω典型（VGS=10V，ID= 1） 低驱动电流 4 V门驱动装置 |
