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2SK2795 MOSFET N-Channel 10V 170mA/0.17A SOT-89 marking DX UHF power amplifier/high output power
| 最大源漏极电压Vds Drain-Source Voltage | 10V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 170mA/0.17A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N-Channel MOS FET UHF Power Amplifier Features Silicon N-Channel MOS FET UHF Power Amplifier High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz) Compact package capable of surface mounting |
| 描述与应用 | 硅N沟道MOS FET UHF功率放大器 特性 硅N沟道MOS FET UHF功率放大器 高输出功率，增益高，生产效率高PG=11分贝，输出功率为24dBm，ηD= 40％以上。 （F=836.5MHz） 紧凑封装，能够表面安装 |
