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3SK184 MESFET-N channel 13V 15mA-21mA -3.5V SOT-143 marking 3RQ RF application/low voltage operating

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Product description
最大源漏极电压Vds
Drain-Source Voltage
13V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-3.5V
漏极电流(Vgs=0V)IDSS
Drain Current
15mA-21mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-3.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsGaAs N-Channel MES FET ,UHF Low-noise Amplifier ,Low NF, For low voltage operation ,MINI Type package suitable for small equipment, tape and magazine types for automatic insertion are available .
描述与应用砷化镓N沟道MES场效应管, 超高频低噪声放大器, 低NF ,用于低电压操作, 迷你型包装适合小型设备,带盒类型可用于自动插入.
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