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3SK239AXR MOSFET N-Channel 12V 50mA SOT-143/MPAK-4 marking XR low voltage operating/low noise gain control amplifier

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Product description
最大源漏极电压Vds
Drain-Source Voltage
12V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
6V
漏极电流(Vgs=0V)IDSS
Drain Current
50mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
-1.2--1.6
Description & Applications100mW/0.1W
描述与应用GaAs Dual Gate MES FET UHF RF amplifier ·Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) · Capable of low voltage operation.
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