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3SK240 MESFET-N channel -9V 6mA-20mA -0.7V -- -1.8V SOT-143 marking UN RF application
| 最大源漏极电压Vds Drain-Source Voltage | -9V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 6mA-20mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.7V -- -1.8V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTER. GaAs N-channel Dual Gate MES FET .Applications :TV TUNER,UHF RF AMPLIFIER APPLICATIONS |
| 描述与应用 | 东芝场效应型晶体管. 砷化镓N沟道双栅MES FET .应用: 电视调谐器，超高频RF放大器应用. |
