3SK240 MESFET-N channel -9V 6mA-20mA -0.7V -- -1.8V SOT-143 marking UN RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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3SK240 MESFET-N channel -9V 6mA-20mA -0.7V -- -1.8V SOT-143 marking UN RF application

Model：3SK240
Mark / screen / code / typing：UN
Manufacturer：
Date Code：05+
Package：SOT-143
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-9V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-4V
漏极电流(Vgs=0V)IDSS Drain Current	6mA-20mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.7V -- -1.8V
耗散功率Pd Power Dissipation	150mW/0.15W
Description & Applications	TOSHIBA FIELD EFFECT TRANSISTER. GaAs N-channel Dual Gate MES FET .Applications :TV TUNER,UHF RF AMPLIFIER APPLICATIONS
描述与应用	东芝场效应型晶体管. 砷化镓N沟道双栅MES FET .应用: 电视调谐器，超高频RF放大器应用.

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