Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
3SK241-R MESFET-N channel 13V 8.5mA-35mA -3.5V SOT-143 marking DUR RF application/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 13V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 8.5mA-35mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -3.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | High Frequency FETs. GaAs N-Channel MES FET. For VHF-UHF amplification. Features: . Low noise-figure (NF) . Large power gain PG . Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管. 砷化镓N沟道MES 场效应管. 用于甚高频-超高频放大, 低噪声系数（NF）, 大功率增益PG, 迷你型包装，通过带/盒包装允许缩减集的大小和自动插入. |
