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3SK254 MOSFET N-Channel 18V 25mA SOT-143 marking U1E low noise gain control amplifier

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Product description
最大源漏极电压Vds Drain-Source Voltage18V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-0.1-1/0-1V
耗散功率Pd Power Dissipation130mW/0.13W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold
描述与应用MOS场效应晶体管 CATV调谐器射频放大器 硅N沟道双栅MOS场效应晶体管 4骏超级迷你模具 •低VDD使用方法(VDS=3.5 V) •驾驶电池 •低噪声系数:NF= 1.8 dB(典型值)。 (六=900兆赫) •高功率增益::GPS=18.0 dB(典型值)。 (六=900兆赫) •适合用于UHF电视调谐器RF放大器。 •自动安装:压花类型大坪 •包装:4针脚小型模具
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