Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
3SK255 MOSFET N-Channel 18V 25mA SOT-143 marking U1G low noise gain control amplifier
最大源漏极电压Vds Drain-Source Voltage | 18V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 25mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.1-1/0-1V |
耗散功率Pd Power Dissipation | 130mW/0.13W |
Description & Applications | FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold |
描述与应用 | •低VDD使用方法(VDS=3.5 V) •驾驶电池 •低噪声系数:NF= 1.8 dB(典型值)。 (六=900兆赫) •高功率增益::GPS=18.0 dB(典型值)。 (六=900兆赫) •适合用于UHF电视调谐器RF放大器。 •自动安装:压花类型大坪 •包装:4针脚小型模具 |