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5HN01CPA-TB MOSFET N-Channel 50V 100mA/0.1A SOT-23/SC-59 marking YC low on-resistance/ultra highspeed switch

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Product description
最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.4V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
描述与应用N-沟道硅MOSFET 超高速开关应用 •低导通电阻。 •超高速开关。 •4V驱动器
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