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5HN02M-TL MOSFET N-Channel 50V 200mA/0.2A SOT-23/SC-59 marking YF low on-resistance/ultra highspeed switch
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.4V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | N-channel Silicon MOSFET General -Purpose Switching Device Application Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. |
| 描述与应用 | N沟道硅MOSFET 通用开关设备应用程序 •低导通电阻。 •超高速开关。 •4V驱动器 |
