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Integrated Circuit(IC) NAND gate 74LVC1G38GM XQFN8 marking YB

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Product description
逻辑类型
Logic Type
与非门 NAND Gate
电路数
Number of Circuits
1
输入数
Number of Inputs
2
电源电压Vcc
Voltage - Supply
1.65V~5.5V
静态电流Iq
Current - Quiescent (Max)
200uA
输出高,低电平电流
Current - Output High, Low
-32mA,32mA
低逻辑电平
Logic Level - Low
0.7V~0.8V
高逻辑电平
Logic Level - High
1.7V~2V
传播延迟时间@Vcc,CL
Max Propagation Delay @ V, Max CL
1.5ns @ 5V,50pF
Description & Applications2-input NAND gate; open drain;FEATURES Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V). ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V ±24 mA output drive (VCC = 3.0 V) CMOS low power consumption Open drain outputs Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V Multiple package options Specified from  −40 °C to +125 °C
描述与应用双输入与非门,开漏;特性 从1.65 V至5.5 V的宽电源电压范围 可承受5 V与5 V逻辑接口输出 高抗干扰 符合JEDEC标准: JESD8-7(1.65 V至1.95 V) JESD8-5(2.3 V到2.7 V) JESD8-B/JESD36(2.7 V至3.6 V) ESD保护: HBM JESD22-A114F超过2000 V MM JESD22-A115-A超过200 V ±24 mA输出驱动器(VCC=3.0 V) CMOS低功耗 开漏输出 闭锁性能超过250 mA 直接接口TTL水平 接受输入电压高达5 V 多种封装选项 -40°C至+125°C
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