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APM2314AC-TRL MOSFET N-Channel 20V 2.8A SOT-23/SC-59 marking M147 high density battery design
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 2.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.060Ω/Ohm @1.2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 20V/2.8A RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SOT-23 Package |
| 描述与应用 | 20V/2.8A RDS（ON）=45mΩ（典型值）@ VGS=4.5V RDS（ON）=55mΩ（典型值）@ VGS=2.5V 超级高密度电池设计ExtremelyLow RD（ON）可靠耐用 SOT-23封装 |
