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BC847BPDW1T1 PNP+NPN Complex Bipolar Transistor -50V/50V -100mA/100mA HEF=200~475 SOT-363/SC-88 marking BF switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -45V/45V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/100mA |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~475 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 600mV |
| 耗散功率Pc Power Dissipation | 380mW |
| Description & Applications | Features •Dual General Purpose Transistors •Pb−Free Package is Available |
| 描述与应用 | 特点 •双通用晶体管 •无铅包装是可用 |
