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BCW61D PNP transistors(BJT) -32V -200mA/-0.2A 180MHz 380~630 -250mV/-0.25V SOT-23/SC-59 marking BD

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−32V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
380~630
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−250mV/-0.25V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & ApplicationsGENERAL PURPOSE TRANSISTOR FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification
描述与应用PNP通用晶体管 特点 •低电流(最大100 mA) •低电压(最大32 V)。 应用 •通用开关和放大
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