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BCW66G NPN Transistors(BJT) 75V 1A 100MHz 160~400 700mV/0.7V SOT-23/SC-59 marking EG
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13 |
| 描述与应用 | NPN通用放大器 •本设备是专为通用放大器应用 集电极电流为500mA。 •来源于过程13 |
