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BFG193 NPN Transistors(BJT) 20V 80mA 6GHz~8GHz 70~140 SOT-223 marking BFG193 low noise，high gain amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 80mA |
| 截止频率fT Transtion Frequency(fT) | 6GHz~8GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 600mW/0.6W |
| Description & Applications | NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description |
| 描述与应用 | NPN硅RF晶体管* •低噪声，高增益放大器高达2 GHz •对于线性宽带放大器 •英尺= 8 GHz时，F = 1分贝在900 MHz •无铅（符合RoHS）包1） •符合AEC Q101 *短期描述 |
