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BFR106 NPN Transistors(BJT) 20V 100mA/0.1A 5GHz 80 SOT-23/SC-59 marking R7W
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN 5 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 说明 硅NPN平面外延晶体管在一个塑料SOT23信封。它的主要目的是为噪音低，一般的RF应用。 |
