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BFS520 NPN Transistors(BJT) 20V 20mA 9Ghz 60~250 SOT-323/SC-70 marking N2
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | 9Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. |
| 描述与应用 | NPN9 GHz的宽带晶体管 特点 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 SOT323信封。 说明 NPN晶体管在一个塑料SOT323信封。 |
