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BSA223SP MOSFET P-Channel -20V -1.5A 0.13ohm SOT-523 marking BP high logic level avalanche rating

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
-1.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.13Ω @-1.5A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45--1V
耗散功率Pd
Power Dissipation
830mW/0.83W
Description & Applications20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
描述与应用RDS(ON)=130mΩ(典型值)@ VGS=-4.5V RDS(ON)=170mΩ(典型值)@ VGS=-2.5V 超级高密度电池设计 可靠耐用 对无铅要求的可用(RoHS标准)
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