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BSA223SP MOSFET P-Channel -20V -1.5A 0.13ohm SOT-523 marking BP high logic level avalanche rating
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -1.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.13Ω @-1.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45--1V |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | 20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) |
| 描述与应用 | RDS（ON）=130mΩ（典型值）@ VGS=-4.5V RDS（ON）=170mΩ（典型值）@ VGS=-2.5V 超级高密度电池设计 可靠耐用 对无铅要求的可用（RoHS标准） |
