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BSH111 MOSFET N-Channel 55V 335mA/0.335A SOT-23/SC-59 marking WK3
最大源漏极电压Vds Drain-Source Voltage | 55V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 55V |
最大漏极电流Id Drain Current | 335mA/0.335A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | |
耗散功率Pd Power Dissipation | 830mW/0.83W |
Description & Applications | TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. |
描述与应用 | 开关速度非常快 逻辑电平兼容 超小型表面贴装封装 门源的ESD保护二极管 |