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BSS84LT1 MOSFET P-Channel -50V -130mA 5ohm SOT-23 marking PD energy efficient
最大源漏极电压Vds Drain-Source Voltage | -50V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -0.13A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 5Ω @-100mA,-5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.9--2.V |
耗散功率Pd Power Dissipation | 225mW/0.225W |
Description & Applications | • Energy Efficient • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
描述与应用 | •节能 •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用 |