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CPH6415 Complex FET 20V 4A SOT-163/SOT23-6/CPH6 marking KR ultra high-speed switch 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
4A
源漏极导通电阻Rds
Drain-Source On-State Resistance
120mΩ@ VGS = 1.8V, ID = 0.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.4~1.3V
耗散功率Pd
Power Dissipation
1.6W
Description & ApplicationsN-Channel Silicon MOSFET General-Purpose Switching Device Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 1.8V drive.
描述与应用N-沟道硅MOSFET 通用开关设备应用 特点  ·低导通电阻。  ·超高速开关。  ·1.8V驱动器。
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