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CPH6415 Complex FET 20V 4A SOT-163/SOT23-6/CPH6 marking KR ultra high-speed switch 1.8V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 120mΩ@ VGS = 1.8V, ID = 0.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 1.8V drive. |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 ·低导通电阻。 ·超高速开关。 ·1.8V驱动器。 |
