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ECH8401 Complex FET 20V 10A ECH8 marking KA ultra high-speed switch 2.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
10A
源漏极导通电阻Rds
Drain-Source On-State Resistance
19mΩ@ VGS = 2.5V, ID = 2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.3V
耗散功率Pd
Power Dissipation
1.6W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.
描述与应用N-沟道硅MOSFET 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •2.5V驱动。
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