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EMB1 Complex Bipolar Digital Transistor -50V -0.1A R1=R2=22KΩ SOT-563/EMT6 marking B1 switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -100MA/-0.1A |
Input Resistance(R1) | 22KΩ |
Base-Emitter Resistance(R2) | 22KΩ |
Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
DC Current Gain(hFE) | |
Transtion Frequency(fT) | 250MHZ |
Power Dissipation (Pd) | 150MW/0.15W |
Description & Applications | Two DTA124E chips in a EMT package. |
Technical Documentation Download | Read Online |