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EMB10 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A R1=2.2KΩ R2=47KΩ SOT-563/EMT6 marking B10 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA |
| Input Resistance(R1) | 2.2KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.0468 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHZ |
| Power Dissipation （Pd） | 0.15W |
| Description & Applications | 1) Two DTA123J chips in a EMT package.
2) Dual PNP silicon transistor (each with two built in resistors)
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| Technical Documentation Download | Read Online |
