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EMD10 Complex Bipolar Digital Transistor 50V 0.1A 250MHZ R1=2.2KΩ R2=47KΩ SOT-563/EMT6 marking D10 switching inverting interface driver circuit
| Q1 Collector-Base Voltage(VCBO) | 50V |
| Q1Collector-Emitter Voltage(VCEO) | 50V |
| Q1 Collector Current(IC) | 100MA |
| Q2 Collector-Base Voltage(VCBO) | -50V |
| Q2Collector-Emitter Voltage(VCEO) | -50V |
| Q2Collector Current(IC) | -100MA |
| Q1 Input Resistance(R1) | 2.2KΩ |
| Q1Base-Emitter Resistance(R2) | 47KΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 0.0468 |
| Q2 Input Resistance(R1) | 2.2KΩ |
| Q2Base-Emitter Resistance(R2) | 47KΩ |
| Q2(R1/R2) Q2 Resistance Ratio | 0.0468 |
| DC Current Gain(hFE) Q1/Q2 | |
| Transtion Frequency(fT) Q1/Q2 | 250MHZ/250MHZ |
| Power Dissipation | 0.15W |
| Description & Applications | NPN+PNP silicon transistor (each with two built in resistors) |
