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EMH11 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 150mW SOT-563/EMT6 marking H11 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/50V |
| Collector-Emitter Voltage(VCEO)Q1/Q2 | 50V/50V |
| Collector Current(IC) Q1/Q2 | 0.1A/0.1A |
| Q1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | |
| Transtion Frequency(fT) Q1/Q2 | 250MHz/250MHZ |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features •General purpose (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •通用（双数字晶体管） •的两个DTC114E芯片在EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
