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EMY1 PNP+NPN Complex Bipolar Transistor -60V/60V -150mA/150mA HEF=120~560 SOT-553/EMT5 marking Y1 switch and digital circuit application
| Collector-Base Voltage(VCBO) Q1/Q2 | -60V/60V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -150mA/150mA |
| Transtion Frequency(fT) Q1/Q2 | 140MHz/180MHz |
| DC Current Gain(hFE) Q1/Q2 | 120~560 |
| Collector-Emitter Saturation Voltage ( (VCE) Q1/Q2 | -500mV/400mV |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features • Emitter common (dual transistors) • Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. • PNP and NPN transistors have common emitters. • Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •发射极普通的（双晶体管） •在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 •PNP和NPN晶体管有共同的发射器。 •安装成本和面积可减少一半。 |
