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EMZ7 NPN+PNP Complex Bipolar Transistor 15V/-15V 500mA/-500mA HEF=270~680 SOT-563/EMT6 marking Z7 switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 15V/-15V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 12V/-12V
集电极连续输出电流IC Collector Current(IC) Q1/Q2 500mA/-500mA
截止频率fT Transtion Frequency(fT) Q1/Q2 320MHz/260MHz
直流电流增益hFE DC Current Gain(hFE) Q1/Q2 270~680/270~680
管压降VCE(sat) Collector-Emitter Saturation Voltage Q1/Q2 90mV/-100mV
耗散功率Pc Power Dissipation Q1/Q2 150mW/0.15W
Description & Applications Features • General purpose transistor(dual transistors) • Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. • Mounting possible with EMT3 or UMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat)
描述与应用 特点 •通用晶体管(双晶体管) •一个2SA2018芯片和2SC5585一个EMT或UMT包的芯片。 •安装EMT3或UMT3自动的安装机器可能。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半。 •低VCE(SAT)
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