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FCX617TA NPN Transistors(BJT) 15V 3A 120MHz 150~450 400mV/0.4V marking 617 power(switch)
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC Collector Current(IC) | 3A |
截止频率fT Transtion Frequency(fT) | 120MHz |
直流电流增益hFE DC Current Gain(hFE) | 150~450 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc Power Dissipation | 2W |
Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ Extremely Low Equivalent On-resistance |
描述与应用 | SOT89 NPN硅功率(开关)晶体管 功耗为2W 12A峰值脉冲电流 优秀的HFE特性至12安培 极低的饱和电压,例如8MV典型 极低的等效导通电阻 |