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FDD6670A MOSFET N-Channel 30V 6.6A TO-252/D-PAK marking FDD6670A low on-resistance/ultra highspeed switch/4Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.010Ω/Ohm @1.3A, |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 7W |
| Description & Applications | • 66 A, 30 V. R DS(on)= 0.008 Ω @ V GS= 10 V RDS(on)= 0.010 Ω @ V GS = 4.5 V. • Low gate charge (35nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(on) |
| 描述与应用 | •66 A，30 V. R DS（ON）= 0.008Ω@ V GS = 10 V RDS（ON）= 0.010Ω@ V GS= 4.5 V。 •低栅极电荷（35NC典型）。 •快速开关速度。 •高性能沟道技术极 低RDS（on） |
