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FDG6301N Complex FET 25V 220mA/0.22A SOT-363/SC70-6 marking 01Y Dual N-Channel digital FET

Price (excluding freight):
Batches(PCS):
$0.450
≤99
$0.396
≤499
$0.324
≤999
$0.270
≤2999
$0.216
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
25V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
220mA/0.22A
源漏极导通电阻Rds
Drain-Source On-State Resistance
5Ω@ VGS = 2.7V, ID =190mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.65~1.5V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsDual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits . Compact industry standard SC70-6 surface mount package.
描述与应用双N沟道,数字FET 概述    这些双N沟道逻辑电平增强模式场效应晶体管都采用飞兆半导体专有的,高细胞密度,DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计,尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路。 紧凑型工业标准SC70-6表面贴装封装。
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