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FDN339AN MOSFET N-Channel 20V 3A SOT-23/SC-59 marking 339 low on-resistance/ultra highspeed switch/2.5Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.035Ω/Ohm @3A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Low gate charge (7nC typical). • High performance trench technology for extremely low RDS(ON) .• High power and current handlingcapability. |
| 描述与应用 | 低栅极电荷（典7nC）。 •高性能沟道技术极低的RDS（ON） •高功率和电流处理能力 |
