Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
FDV302P MOSFET P-Channel -25V -120mA/0.12A 0.079ohm SOT-23 marking 302
| 最大源漏极电压Vds Drain-Source Voltage | -25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
| 最大漏极电流Id Drain Current | -0.12A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.079Ω @-200mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.65--1.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. |
| 描述与应用 | 非常低的水平栅极驱动要求可直接 操作在3V电路。 VGS（TH）<1.5V。 门源齐纳ESD坚固。 >6kV人体模型 紧凑型工业标准SOT-23表面贴装封装。 更换众多PNP数字的晶体管（DTCx和DCDx） 具有一DMOS FET |
