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FDV302P MOSFET P-Channel -25V -120mA/0.12A 0.079ohm SOT-23 marking 302

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-25V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-0.12A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.079Ω @-200mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.65--1.5V
耗散功率Pd
Power Dissipation
350mW/0.35W
Description & ApplicationsVery low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
描述与应用非常低的水平栅极驱动要求可直接 操作在3V电路。 VGS(TH)<1.5V。 门源齐纳ESD坚固。 >6kV人体模型 紧凑型工业标准SOT-23表面贴装封装。 更换众多PNP数字的晶体管(DTCx和DCDx) 具有一DMOS FET
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