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FMMT718TA PNP transistors（BJT） -20V -1.5A 200MHz 60 -175mV/-0.175V SOT-23 marking 718 low saturation voltage/low equivalent on-resistance
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | -1.5A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -175mV/-0.175V |
| 耗散功率Pc PoWer Dissipation | 625mW/0.625W |
| Description & Applications | SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat) |
| 描述与应用 | SOT23 PNP硅功率 （开关）晶体管 特点 *功耗625mW * CONT IC 2.5A * IC高达10A峰值脉冲电流 *优秀HFE特性10A（脉冲） *极低的饱和电压 *具有极低的等效导通电阻 |
