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FMMTH10TA NPN Transistors(BJT) 30V 25mA 650MHz 60 500mV/0.5V SOT-23/SC-59 marking 3EZ RF
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 25mA |
| 截止频率fT Transtion Frequency(fT) | 650MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 NPN SILICON PLANAR RF TRANSISTOR High fT=650MHz Maximum capacitance 0.7pF Low noise < 5dB at 500MHz |
| 描述与应用 | SOT23 NPN硅平面RF晶体管 高FT =650MHz 最大容量的0.7 pF 频率为500MHz时低噪声<5dB |
