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FZT653TA NPN Transistors(BJT) 120V 2A 175MHz 100~300 500mV/0.5V SOT-223 marking FZT653
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 175MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Low saturation voltage COMPLEMENTARY TYPE - FZT757 |
| 描述与应用 | SOT223 NPN硅平面 高性能晶体管 低饱和电压 互补型 - FZT757 |
